• DocumentCode
    3441062
  • Title

    A universal smart control IC for high-power IGBT applications

  • Author

    Herzer, R. ; Schimanek, E. ; Bokeloh, Ch ; Lehmann, J.

  • Author_Institution
    SEMIKRON Elektronik GmbH, Nurnberg, Germany
  • Volume
    3
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    467
  • Abstract
    Increasing electrical requirements to more reliable and sophisticated driver technology to turn on and turn off IGBT or MOSFET power semiconductors, a new universal smart control integrated circuit (IC) for IGBT-Intelligent Power Modules (IPM) is presented. It is usable for high-power applications up to 3,500 V for several hundred amperes and frequencies up to 50 kHz. The concept includes several driver, protection and monitor functions, such as a short pulse suppression, a mutual interlock of IGBTs, an undervoltage monitoring of the operating voltage, an optional VCE-temperature- and current-monitoring of the IGBT and a common error processing. The potential separation and the specific gate driver stages are separated. The IC is designed and manufactured in a high voltage CMOS technology. This paper comprises a detailed discussion of customers advantages due to the implementation of the SKIC2001 in terms of reliability, flexibility of control and increasing performance when paralleling high power modules
  • Keywords
    CMOS integrated circuits; bridge circuits; driver circuits; insulated gate bipolar transistors; intelligent control; mixed analogue-digital integrated circuits; monitoring; power integrated circuits; power transistors; protection; 3500 V; 50 kHz; ASIC; HV CMOS technology; IGBT-intelligent power modules; SKIC2001; current-monitoring; driver technology; error processing; halfbridge configuration; high-power IGBT applications; monitor functions; mutual interlock; power semiconductors; protection functions; reliability; short pulse suppression; undervoltage monitoring; universal smart control IC; Application specific integrated circuits; CMOS technology; Driver circuits; Insulated gate bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Monitoring; Multichip modules; Semiconductor device reliability; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 1998 IEEE International Conference on
  • Conference_Location
    Lisboa
  • Print_ISBN
    0-7803-5008-1
  • Type

    conf

  • DOI
    10.1109/ICECS.1998.814040
  • Filename
    814040