Epitaxial film silicon solar cells fabricated by hot wire chemical vapor deposition below 750°C

Author

Alberi, Kirstin ; Martin, Ina T. ; Shub, Maxim ; Teplin, Charles W. ; Iwaniczko, Eugene ; Xu, Yueqin ; Duda, Anna ; Stradins, Paul ; Johnston, Steve W. ; Romero, Manuel J. ; Branz, Howard M. ; Young, David L.

Author_Institution

Nat. Renewable Energy Lab., Nat. Center for Photovoltaics, Golden, CO, USA

fYear

2009

fDate

7-12 June 2009

Abstract

We report the fabrication of film c-Si solar cells on Si wafer templates by hot wire chemical vapor deposition. These devices, grown at glass-compatible temperatures below 750Â° C, demonstrate open-circuit voltages greater than 500 mV and efficiencies above 5%. Analysis of the device characteristics and quantum efficiency provides important information about the epitaxial c-Si absorber material quality as a function of growth temperature.

Keywords

chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; Si; Si wafer templates; epitaxial c-Si absorber material; epitaxial film silicon solar cells; film c-Si solar cells; glass-compatible temperatures; growth temperature; hot wire chemical vapor deposition; open-circuit voltages; quantum efficiency; Chemical vapor deposition; Crystalline materials; Crystallization; Photovoltaic cells; Semiconductor films; Silicon; Substrates; Temperature; Voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411276

Filename

5411276