Electro-optically addressable total internal reflection switch in domain-engineered LiNbO/sub 3/

Author

Boyland, A.J. ; Ross, G.W. ; Mailis, S. ; Smith, P.G.R. ; Eason, R.W.

Author_Institution

Optoelectron. Res. Centre, Southampton Univ., UK

fYear

2001

fDate

11-11 May 2001

Firstpage

17

Abstract

Summary form only given. We have developed a novel electro-optically addressable total internal reflection (TIR) switch in a sample of LiNbO/sub 3/ that has been engineered to have a sharp boundary between two anti-parallel domain regions. Such a switch can provide numerous advantages including ease of fabrication, the possibility of high contrast ratios (TIR is a 100% efficient process), relatively low drive voltages, and a wavelength dependence that is superior to other electro-optic devices such as Pockels cells.

Keywords

dielectric polarisation; electric domains; electro-optical switches; integrated optics; lithium compounds; optical fabrication; LiNbO/sub 3/; annealing; antiparallel domain regions; domain-engineered crystal; effective index difference; electric-field poled; electro-optically addressable total internal reflection switch; fabrication; grazing incidence; high contrast ratios; polarization selectivity; relatively low drive voltages; sharp boundary; wavelength dependence; Electrooptic devices; Lasers and electrooptics; Optical arrays; Optical attenuators; Optical polarization; Optical reflection; Optical refraction; Optical switches; Refractive index; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947406

Filename

947406