• DocumentCode
    3442125
  • Title

    10% efficiency solar cells with 0.5 µm of CdTe

  • Author

    Plotnikov, V.V. ; Kwon, Dohyoung ; Wieland, K.A. ; Compaan, A.D.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    Fabricating high-efficiency CdS/CdTe solar cells with ultra-thin (below 1 μm) absorber layers is a challenging yet highly desirable step in improving CdTe technology. Typically solar cell performance decreases due to shunting, incomplete absorption (deep penetration loss), fully depleted CdTe layers or interference between the main and the back contact junction when the CdTe layer thickness approaches a certain limit. While some of these losses are fundamental, others can be minimized by careful optimization of the fabrication steps. We present the results of such optimization.
  • Keywords
    II-VI semiconductors; cadmium compounds; optimisation; solar cells; CdS-CdTe; back contact junction; deep penetration loss; high-efficiency solar cells; optimisation; ultrathin absorber layers; Astronomy; Commercialization; Current density; Gold; Photovoltaic cells; Physics; Solar heating; Technological innovation; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411312
  • Filename
    5411312