DocumentCode
3442125
Title
10% efficiency solar cells with 0.5 µm of CdTe
Author
Plotnikov, V.V. ; Kwon, Dohyoung ; Wieland, K.A. ; Compaan, A.D.
Author_Institution
Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
fYear
2009
fDate
7-12 June 2009
Abstract
Fabricating high-efficiency CdS/CdTe solar cells with ultra-thin (below 1 μm) absorber layers is a challenging yet highly desirable step in improving CdTe technology. Typically solar cell performance decreases due to shunting, incomplete absorption (deep penetration loss), fully depleted CdTe layers or interference between the main and the back contact junction when the CdTe layer thickness approaches a certain limit. While some of these losses are fundamental, others can be minimized by careful optimization of the fabrication steps. We present the results of such optimization.
Keywords
II-VI semiconductors; cadmium compounds; optimisation; solar cells; CdS-CdTe; back contact junction; deep penetration loss; high-efficiency solar cells; optimisation; ultrathin absorber layers; Astronomy; Commercialization; Current density; Gold; Photovoltaic cells; Physics; Solar heating; Technological innovation; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411312
Filename
5411312
Link To Document