Grating-coupled external cavity quantum cascade semiconductor lasers

Author

Luo, G.P. ; Peng, C. ; Le, H.Q. ; Hwang, W.-Y. ; Ishaug, B. ; Um, J. ; Baillargeon, J.N.

Author_Institution

Dept. of Electr. & Comput. Eng., Houston Univ., TX, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

55

Lastpage

56

Abstract

Summary form only given. Widely wavelength-tunable mid-infrared lasers are useful for broadband spectral sensing. Grating-coupled external cavity InAs/InAsSb or GaSb/InAsSb 3-4 /spl mu/m lasers have been demonstrated with large tuning range. The work investigates the wavelength tuning property of InGaAs/InAlAs quantum cascade lasers using grating-coupled external cavity. An objective is to determine the optimal condition for threshold and power efficiency as a function of wavelength and temperature. Knowledge of these conditions can help choosing a wafer design for which a DFB or DBR laser can be fabricated for a specific a wavelength and temperature range. The materials were grown by MBE and fabricated into 10-12 /spl mu/m-wide, 0.5-2 mm-long ridge-waveguide lasers. Typical free-running power was /spl sim/350 mW peak at 80 K and /spl sim/ few 10´s mW above 220 K.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser feedback; laser tuning; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 0.5 to 2 mm; 10 to 12 micron; 220 K; 3 to 4 micron; 350 mW; 80 K; DBR laser; DFB laser; GaSb/InAsSb lasers; InAs/InAsSb lasers; InGaAs-InAlAs; InGaAs/InAlAs quantum cascade lasers; broadband spectral sensing; fabrication; free-running power; grating-coupled external cavity; grating-coupled external cavity lasers; grating-coupled external cavity quantum cascade semiconductor lasers; mid-infrared lasers; optimal condition; power efficiency; quantum cascade lasers; ridge-waveguide lasers; semiconductor lasers; temperature; temperature range; threshold efficiency; tuning range; wavelength; wavelength range; wavelength tuning property; wavelength-tunable lasers; widely wavelength-tunable mid-infrared lasers; Distributed Bragg reflectors; Gas lasers; Gratings; Indium compounds; Indium gallium arsenide; Laser tuning; Optical design; Quantum cascade lasers; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947456

Filename

947456