Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.

Author

Thean, A.V.-Y. ; Prabhu, L. ; Vartanian, V. ; Ramon, M. ; Nguyen, B.-Y. ; White, T. ; Collard, H. ; Xie, Q.-H. ; Murphy, S. ; Cheek, J. ; Venkatesan, S. ; Mogab, J. ; Chang, C.H. ; Chiu, Y.H. ; Tuan, H.C. ; See, Y.C. ; Liang, M.S. ; Sun, Y.C.

Author_Institution

Freescale Semicond. Inc., Austin,, TX

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

509

Lastpage

512

Abstract

This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced stressor and channel orientation. We have demonstrated a method of uniaxial stress relaxation with compressive capping layer (cESL) to achieve the desired stress configurations for enhanced short-channel SC-SSOIpMOS devices

Keywords

MOSFET; silicon-on-insulator; stress effects; stress relaxation; PMOS; SC-SSOI; biaxial lattice strain; channel orientation; compressive capping layer; different channel orientations; process-induced stressor; stress engineering; super-critical strained-silicon directly on insulator; uniaxial relaxation; uniaxial-biaxial stress hybridization; Capacitive sensors; Circuits; Compressive stress; Degradation; Insulation; Lattices; MOS devices; Sun; Tensile stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609393

Filename

1609393