DocumentCode
3443376
Title
Segmented gain-section AlGaInP laser
Author
Kim, S. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2001
fDate
11-11 May 2001
Firstpage
81
Abstract
Summary form only given. We report on the fabrication of a new class of broad-area laser, the segmented gain-section laser (SGSL), in which the gain section is segmented to support a single transverse mode and to suppress filamentation.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical fabrication; photoluminescence; quantum well lasers; AlGaInP; AlGaInP segmented gain-section laser; broad-area laser; filamentation suppression; gain section; single transverse mode; Annealing; Diffraction; Electrons; Gratings; Laser modes; Laser stability; Laser tuning; Power generation; Ring lasers; Ring oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-662-1
Type
conf
DOI
10.1109/CLEO.2001.947497
Filename
947497
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