Structural optimization of InGaP/GaAs HBT for power amplifier applications

Author

Lee, Y.S. ; Park, C.S.

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., Taejon, South Korea

fYear

2001

fDate

2001

Firstpage

57

Lastpage

60

Abstract

We devised a dual emitter structure (1B2E) of InGaP/GaAs HBT for MMIC power amplifier application, fabricated with a standard 2 μm emitter-width process, and analyze the thermal limitation and power density performance compared to the conventionally used structure (2B1E). The structure, composed of 1 base with 2 surrounding emitter fingers (1B2E), has been simulated showing its several advantages in thermal behavior and it suitability for high power applications. Thermal distribution analysis reveals that one unit cell of 1B2E has a lower value of maximum temperature under the emitter electrode than that for the unit cell of 2B1E by 14 K. The measured current gain falloff of the 1B2E was less than the 2B1E by 1.41 times, and does not show any current gain collapse in the array structure for high power application

Keywords

III-V semiconductors; MMIC power amplifiers; circuit optimisation; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; thermal analysis; 2 micron; HBT; III-V semiconductor; InGaP-GaAs; MMIC power amplifier application; array structure; dual emitter structure; emitter electrode; emitter fingers; measured current gain falloff; performance analysis; power density; structural optimization; thermal distribution analysis; thermal limitation; unit cell; Current measurement; Electrodes; Fingers; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Performance analysis; Power amplifiers; Power measurement; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2001. RAWCON 2001. IEEE

Conference_Location

Waltham, MA

Print_ISBN

0-7803-7189-5

Type

conf

DOI

10.1109/RAWCON.2001.947509

Filename

947509