Modeling, synthesis, and characterization of thin film Copper Oxide for solar cells

The modeling, growth, and characterization of Copper Oxide thin films for solar cell applications are reported. Cu₂O has several attractive properties which include its direct band gap (Eg = 2.17 eV) for use in photo-electrolysis of water and use in tandem multi-junction cells. Detailed balance calculations predict efficiencies on the order of 20% while Cu₂O cells have yet to even pass 2% efficiency. The device physics model reveals that defects, particularly at the heterojunction interface, are the main reason for lowered efficiencies. Epitaxial Cu₂O (100) thin films on MgO are fabricated using RF Oxygen plasma MBE. The films are quite smooth and showed mobilites in the range of 10-100 cm²/V*sec and carrier concentrations in the range of 10¹⁴-10¹⁷. Finally, the epitaxial growth of Cu₂O on a MgO template is demonstrated.