MOdeling of SI-based thin film triple-junction solar cells

Author

Xiao, Y.G. ; Uehara, K. ; Lestrade, M. ; Li, Z.Q. ; Li, Z.Q.

Author_Institution

Crosslight Software Inc., Burnaby, BC, Canada

fYear

2009

fDate

7-12 June 2009

Abstract

Based on Crosslight APSYS, amorphous Si (aSi:H)/amorphous SiGe:H (a-SiGe:H)/microcrystalline (Â¿c-Si) thin film triple junction solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and l-V curves for individual junctions are presented for current matching analyses. The whole TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO:Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for TJ thin film solar cells.

Keywords

Ge-Si alloys; II-VI semiconductors; aluminium; amorphous semiconductors; finite difference time-domain analysis; hydrogen; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; Crosslight APSYS; FDTD; I-V curves; SiGe:H; TCO layer affinity; ZnO:Al; amorphous silicon; band diagrams; finite difference time domain; microcrystalline thin film; optical absorption; optical generation; silicon based thin film; triple junction solar cells; Absorption; Amorphous materials; Finite difference methods; Optical films; Photovoltaic cells; Quantum dots; Semiconductor materials; Semiconductor thin films; Solar power generation; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411414

Filename

5411414