• DocumentCode
    3444134
  • Title

    Ultra-fast programming of silicided polysilicon fuses based on new insights in the programming physics

  • Author

    Doorn, T.S. ; Altheimer, M.

  • Author_Institution
    Philips Res., High Tech Campus, Eindhoven
  • fYear
    2005
  • fDate
    5-5 Dec. 2005
  • Firstpage
    667
  • Lastpage
    670
  • Abstract
    New insights in the programming physics of silicided polysilicon fuses integrated in 90 nm CMOS have led to a programming time of 100 ns, while achieving a resistance increase of 107. This is an order of magnitude better than any previously published result for the programming time and resistance increase individually. Simple calculations and TEM-analyses substantiate the proposed programming mechanism. The advantage of a rectangular fuse head over a tapered fuse head is shown and explained
  • Keywords
    MIS devices; electric fuses; silicon; 100 ns; 90 nm; CMOS technology; Si; TEM-analyses; nanotechnology; programming physics; silicided polysilicon fuses; ultra-fast programming; Current measurement; Electric breakdown; Electrical resistance measurement; Fuses; Physics; Pulse measurements; Silicides; Testing; Transmission line measurements; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-9268-X
  • Type

    conf

  • DOI
    10.1109/IEDM.2005.1609439
  • Filename
    1609439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3444134