Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

Author

Tsutsui, Gen ; Saitoh, Masumi ; Saraya, Takuya ; Nagumo, Toshiharu ; Hiramoto, Toshiro

Author_Institution

Inst. of Ind. Sci., Tokyo Univ.

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

729

Lastpage

732

Abstract

This paper reports the first experimental demonstration of electron mobility enhancement due to the volume inversion at relatively high N_inv region (6times10¹² cm^-2 ) in (HO)-oriented UTB DG nMOSFETs with the t_body range of less than 5 nm. The physical origin of mobility enhancement is attributable to: (1) the suppression of surface roughness scattering by relaxed electric field; and (2) negligibly small degradation of the mobility limited by delta_tSOI-induced scattering compared to SG that severely degrades mobility in (100)-oriented UTB DG nMOSFETs by quantum confinement

Keywords

MOSFET; electron mobility; semiconductor device models; surface roughness; double-gate nMOSFET; electron mobility enhancement; quantum confinement; relaxed electric field; surface roughness scattering; volume inversion; Charge carrier density; Degradation; Effective mass; Electronic mail; Light scattering; MOSFETs; Particle scattering; Rough surfaces; Surface roughness; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609456

Filename

1609456