Multi-finger power HBT model for nonlinear circuit simulation

Author

Zhu, Yu. ; Cai, Qian ; Balasubramanian, R. ; Gerber, Jason

Author_Institution

Ansoft Corp., Elmwood Park, NJ, USA

fYear

2001

fDate

2001

Firstpage

129

Lastpage

132

Abstract

A multi-finger power HBT model is developed by incorporating multiple unit finger HBT models with a multi-port thermal network. Each unit finger HBT model exhibits temperature and bias variations. The multi-port thermal network represents self-heating and thermal coupling effects. This power HBT model, implemented in a nonlinear circuit simulator, can be used to perform DC, small signal, and large signal simulation. Unique behaviors of multi-finger HBT, such as current collapse and the decrease in power output, are reproduced. The influence of ballasting resistance is also investigated

Keywords

circuit simulation; heterojunction bipolar transistors; multiport networks; nonlinear network analysis; semiconductor device models; thermal analysis; DC simulation; ballasting resistance; bias variation; current collapse; large signal simulation; multi-finger power HBT model; multi-port thermal network; nonlinear circuit simulation; power output; self-heating effects; small signal simulation; temperature variation; thermal coupling effects; Charge carrier processes; Circuit simulation; Coupling circuits; Electric resistance; Electron emission; Fingers; Heterojunction bipolar transistors; Nonlinear circuits; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 2001. RAWCON 2001. IEEE

Conference_Location

Waltham, MA

Print_ISBN

0-7803-7189-5

Type

conf

DOI

10.1109/RAWCON.2001.947558

Filename

947558