Coherent control of semiconductors: linking quantum interference to macroscopic nonlinearities

Summary form only given. Our work concentrates on the interference of transition amplitudes induced by various optical perturbations connecting valence and conduction band states in bulk semiconductors. Depending on the material, underlying lattice symmetry or crystal orientation we are able to demonstrate control of optoelectronic parameters and processes such as carrier density, carrier current and spin current. All these generation processes can also be understood macroscopically within the context of nonlinear optical processes of different orders, an unsurprising result since nonlinear susceptibilities measure how coherent beams interact with matter. Using single and multiple beams, cw and femtosecond time-resolved studies we offer insights into how coherent radiation can control nonequilibrium states of semiconductors.