High speed toggle MRAM with mgO-based tunnel junctions

Author

Slaughter, J.M. ; Dave, R.W. ; Durlam, M. ; Kerszykowski, G. ; Smith, K. ; Nagel, K. ; Feil, B. ; Calder, J. ; DeHerrera, M. ; Garni, B. ; Tehrani, S.

Author_Institution

Freescale Semicond., Inc., Technol. Solutions Organ., Chandler, AZ

fYear

2005

fDate

5-5 Dec. 2005

Firstpage

873

Lastpage

876

Abstract

We report here the first integration of a new generation of high magnetoresistance-ratio (MR) magnetic tunnel junction (MTJ) material with a 90 nm CMOS front-end logic process. This new material, with MgO tunnel barriers, significantly increased the read signal over standard AlO_x-based material. The 90 nm CMOS test vehicle has 8 kb arrays of 1T1MTJ memory cells with two orthogonal program lines oriented at 45deg from the bit easy axis for toggle switching. Read and toggle-write operations are demonstrated

Keywords

CMOS logic circuits; aluminium compounds; high-speed integrated circuits; integrated memory circuits; magnesium compounds; magnetoresistive devices; random-access storage; tunnelling; 800 bit; 90 nm; AlO; CMOS logic process; MgO; front-end logic process; high magnetoresistance-ratio; high speed toggle MRAM; magnetic tunnel junction material; memory cells; toggle switching; CMOS technology; Circuit simulation; Magnetic circuits; Magnetic materials; Magnetic properties; Magnetic switching; Magnetic tunneling; Random access memory; Semiconductor materials; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International

Conference_Location

Washington, DC

Print_ISBN

0-7803-9268-X

Type

conf

DOI

10.1109/IEDM.2005.1609496

Filename

1609496