Room temperature CW operation of GaAsSb/GaAs VCSELs near 1.3 /spl mu/m

Author

Quochi, R. ; Cunningham, J.E. ; Kilper, D.C. ; Dinu, M. ; Shah, J.

Author_Institution

Lucent Technol. Bell Labs, Holmdel, NJ, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

135

Abstract

Summary form only given. We report on the room temperature operation of optically pumped vertical-cavity surface-emitting lasers (VCSELs) based on GaAsSb/GaAs quantum wells (QWs). Continuous-wave (CW) operation with 200 /spl mu/W maximum output power at /spl cong/1.275 /spl mu/m, as well as quasi-CW operation up to 1.29 /spl mu/m, has been achieved. These are the first GaAsSb/GaAs QW VCSELs lasing near 1.3 /spl mu/m. The maximum output power approaches communication requirements.

Keywords

III-V semiconductors; gallium arsenide; optical pumping; quantum well lasers; surface emitting lasers; 1.3 micron; 200 muW; GaAsSb-GaAs; high-speed optical communications; long-wavelength VCSEL; maximum output power; molecular-beam epitaxy; optically pumped VCSEL; quantum wells; quasi-CW operation; room temperature CW operation; Gallium arsenide; Laser excitation; Mirrors; Optical pumping; Power generation; Pump lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947601

Filename

947601