NBTI in SOI p-channel MOS field effect transistors

Author

Liu, S.T. ; Ioannou, D.E. ; Ioannou, D.P. ; Flanery, M. ; Hughes, H.L.

Author_Institution

Honeywell Defense & Space Electron. Syst., Plymouth, MN, USA

fYear

2005

fDate

17-20 Oct. 2005

Abstract

In this paper we describe NBTI tests and report results for partially depleted (PD) SOI MOSFETs selected from 0.35 and 0.15 μm technologies for harsh environment (i.e., space, high temperature, etc.) applications. When studying "pure" NBTI degradation, we find that the results are similar to bulk technologies, and in good agreement with the standard reaction-diffusion (R-D) theory of NBTI. However, when both gate and drain are biased as in a hot carrier injection (HCI) degradation situation, an interesting interaction of HCI and NBTI is observed, which leads to the resolution of the question of worst case HCI stress conditions for p-channel SOI MOSFETs with thin gate oxides.

Keywords

MOSFET; hot carriers; reaction-diffusion systems; semiconductor device reliability; semiconductor device testing; silicon-on-insulator; 0.15 micron; 0.35 micron; HCI stress conditions; NBTI degradation; SOI p-channel MOS field effect transistors; hot carrier injection degradation; negative temperature bias instability; partially depleted SOI MOSFET; reaction-diffusion theory; thin gate oxides; Degradation; FETs; Hot carrier injection; Human computer interaction; MOSFETs; Niobium compounds; Space technology; Temperature; Testing; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2005 IEEE International

Print_ISBN

0-7803-8992-1

Type

conf

DOI

10.1109/IRWS.2005.1609554

Filename

1609554