Impact of moisture on porous low-k reliability

Author

Michelon, J. ; Hoofman, R.J.O.M.

Author_Institution

Philips Res. Leuven

fYear

2005

fDate

17-20 Oct. 2005

Abstract

In this paper, the impact of moisture on the reliability of porous low-k materials has been investigated. It was found that moisture uptake is more serious for more porous SiOC low-k materials and its presence inside the low-k has a strong impact on dielectric reliability. It has been demonstrated that by eliminating moisture, the leakage current can be significantly decreased and in addition higher breakdown electric fields and longer dielectric lifetimes can be achieved. Therefore, integration of porous low-k materials requires a maximum of attention to prevent moisture uptake at each step during integration and in addition the passivation layers need to be perfectly hermetic in order to maintain good dielectric reliability

Keywords

dielectric materials; electric fields; leakage currents; moisture; porous materials; reliability; silicon compounds; SiOC; breakdown electric fields; dielectric lifetimes; dielectric reliability; leakage current; moisture uptake; passivation layers; porous SiOC materials; porous low-k materials; porous low-k reliability; Capacitance; Copper; Current measurement; Dielectric materials; Leakage current; Materials reliability; Mesoporous materials; Moisture; Temperature; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2005 IEEE International

Conference_Location

S. Lake Tahoe, CA

Print_ISBN

0-7803-8992-1

Type

conf

DOI

10.1109/IRWS.2005.1609558

Filename

1609558