DocumentCode
3446814
Title
Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric
Author
Lloyd, J.R. ; Shaw, T.M. ; Liniger, E.G.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2005
fDate
17-20 Oct. 2005
Abstract
In a study of the TDDB performance of an ultra-low-k (ULK) dielectric (JSR 5537 k = 2.3) it was found that the presence of moisture significantly reduced the TDDB lifetime as well as increased leakage and capacitance. It was also observed that the field coefficient (γ) in an "E" TDDB lifetime model was significantly larger in "dry" samples than in "wet" samples.
Keywords
dielectric materials; electric breakdown; moisture; TDDB behavior; TDDB lifetime model; field coefficient; time dependent dielectric breakdown; ultra-low-k dielectric; Capacitance measurement; Dielectric breakdown; Dielectric constant; Dielectric materials; Humidity; Moisture; Seals; Silicon compounds; Temperature measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2005 IEEE International
Print_ISBN
0-7803-8992-1
Type
conf
DOI
10.1109/IRWS.2005.1609559
Filename
1609559
Link To Document