High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base

Author

Yamazaki, Tatsuya ; Namura, Itaru ; Sugii, Toshihiro ; Goto, Hiroshi ; Tahara, Akinori ; Ito, Takashi

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1991

fDate

9-10 Sep 1991

Firstpage

71

Lastpage

74

Abstract

The authors describe the AC performance of a Si-heterojunction bipolar transistor using a SiC wide-gap emitter with a photoepitaxially grown heavily doped ultrathin base (SiC-EBT). A 30-GHz cutoff frequency and low base resistance were achieved, while retaining an acceptable current gain and preventing tunneling current. The DC characteristics of the SiC-EBT were good enough to use in high-performance LSIs

Keywords

bipolar integrated circuits; elemental semiconductors; heavily doped semiconductors; heterojunction bipolar transistors; large scale integration; silicon; 30 GHz; AC performance; DC characteristics; Si-SiC; SiC wide-gap emitter; heavily doped ultrathin base; heterojunction bipolar transistor; high-performance LSIs; high-speed device; photoepitaxially grown base; Cutoff frequency; Delay; Doping; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Indium tin oxide; Laboratories; Silicon carbide; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160959

Filename

160959