Predictive modeling of thermal effects in BJTs

Author

Fox, Robert M. ; Lee, Sang-Gug

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

89

Lastpage

92

Abstract

The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y₂₂ and Y₁₂. A frequency-domain solution to the heat-flow equation which applies to any rectangular emitter geometry is presented. This model, although simple enough for CAD, (computer-aided design) predicts thermal spreading impedance with good accuracy for a wide range of frequencies. The small-signal model has been implemented in SPICE

Keywords

bipolar transistors; electronic engineering computing; semiconductor device models; thermal analysis; BJT; CAD; SPICE; bipolar junction transistor; computer-aided design; frequency-domain solution; heat-flow equation; rectangular emitter geometry; self-heating; small-signal model; small-signal parameters; thermal effects; thermal spreading impedance; Circuits; Electric variables measurement; Electrical resistance measurement; Equations; Heating; Impedance; Packaging; Predictive models; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160963

Filename

160963