Influence of gate length on the performance of GaAs MESFETs by a physical I-V model

Author

Bobbo, M. ; Passauo, V.M.N. ; Giorgio, A. ; Perri, A.G.

Author_Institution

Dipt. di Elettrotecnica ed Elettronica, Bari Politecnico, Italy

Volume

3

fYear

1999

fDate

1999

Firstpage

1675

Abstract

In this paper, the influence of gate length on the performance of GaAs MESFETs by a physical I-V model has been evaluated. The Chang-Fetterman electron mobility relationship has been used in the I-V model, based on the analytical solution of the two-dimensional Poisson equation and current-continuity equation. Numerical results are shown in terms of calculated I-V curves for MESFETs already presented in literature, by varying the gate length. These curves illustrate the good agreement with experimental data and with other numerical models. The greater simplicity, deeper physical insight and possibility of great extension to a fully physical C-V approach makes this model more attractive than those based on other methods

Keywords

III-V semiconductors; Poisson equation; Schottky gate field effect transistors; electron mobility; gallium arsenide; semiconductor device models; 2D Poisson equation; GaAs; GaAs MESFETs; MESFET performance; calculated I-V curves; current-continuity equation; electron mobility relationship; gate length; physical I-V model; Capacitance-voltage characteristics; Electron mobility; FETs; Gallium arsenide; MESFETs; Numerical models; Poisson equations; Semiconductor process modeling; Solid modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.814497

Filename

814497