Modeling concepts for modern semiconductor devices

Author

Kosina, H. ; Simlinger, Th

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Austria

fYear

1995

fDate

11-14 Oct 1995

Firstpage

27

Lastpage

36

Abstract

As semiconductor technology continues to evolve, numerical modeling of the electrical device behavior is becoming increasingly important. In this contribution, results of a two-dimensional transient simulation of a charge-coupled device are presented. A hydrodynamic model suitable to describe the high electron mobility transistor is presented as well as simulation results. The concepts underlying the simulation of these rather complex devices are briefly discussed. Models for mobility and heat flux are critically reviewed

Keywords

carrier mobility; charge-coupled devices; high electron mobility transistors; numerical analysis; semiconductor device models; thermal analysis; transient analysis; CCD; HEMT; charge-coupled device; heat flux; high electron mobility transistor; hydrodynamic model; mobility; numerical modeling; semiconductor devices; two-dimensional transient simulation; Boundary conditions; Circuit simulation; Differential equations; Geometry; Iterative algorithms; Linear systems; Poisson equations; Semiconductor devices; Solid modeling; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494859

Filename

494859