DocumentCode
3449728
Title
Transmission electron microscopy and spectroellipsometric investigation of LPCVD polysilicon as-deposited and after hydrogenation
Author
Flueraru, C. ; Vrinceanu, C. ; Rotaru, C. ; Stoica, M. ; Vasile, E. ; Gartner, M.
Author_Institution
Inst. of Microtechnol., Bucharest, Romania
fYear
1995
fDate
11-14 Oct 1995
Firstpage
167
Lastpage
170
Abstract
Polycrystalline silicon deposited at 570°C and 620°C temperature: as-deposited and after hydrogenation was investigated by spectroellipsometry and transmission electron microscopy. The paper also includes the evaluation of crystallinity fraction of polysilicon via Bruggeman-Effective Medium Approximation and the statistical analysis of grain size
Keywords
chemical vapour deposition; elemental semiconductors; grain size; hydrogen; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; transmission electron microscopy; 570 degC; 620 degC; Bruggeman-effective medium approximation; LPCVD; Si:H; crystallinity fraction; grain size; hydrogenation; polysilicon; semiconductor; spectroellipsometry; transmission electron microscopy; Crystalline materials; Crystallization; Grain size; Optical films; Optical surface waves; Rough surfaces; Silicon; Surface roughness; Temperature; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.494889
Filename
494889
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