DocumentCode
3451222
Title
An improved model for collector currents in lateral PNP transistors
Author
Joardar, Kuntal
Author_Institution
Motorola, Mesa, AZ, USA
fYear
1991
fDate
9-10 Sep 1991
Firstpage
154
Lastpage
157
Abstract
A physically based analytical model for collector current in lateral PNP transistors is derived by solving the two-dimensional diffusion equation. Comparison with computer simulations and existing models demonstrates improvements in accuracy realized by the model. This analytical model relates circuit model parameters to physical process parameters and should therefore find application in circuit design optimization and in statistical analyses
Keywords
bipolar transistors; semiconductor device models; 2D model; circuit design optimization; circuit model parameters; collector currents; computer simulations; device physics; lateral PNP transistors; physical process parameters; physically based analytical model; statistical analyses; two-dimensional diffusion equation; Analytical models; Circuit simulation; Computational modeling; Computer simulation; Equations; Numerical models; Radiative recombination; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0103-X
Type
conf
DOI
10.1109/BIPOL.1991.160977
Filename
160977
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