• DocumentCode
    3452466
  • Title

    Intensity and frequency noise in semiconductor lasers

  • Author

    Vahala, Kerry J.

  • Author_Institution
    California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1991
  • fDate
    29-31 May 1991
  • Firstpage
    539
  • Abstract
    Summary form only given. The author reviewed the physics governing field fluctuations in semiconductor lasers, discussed the performance levels that have been achieved in state-of-the-art devices, and tried to forecast future performance levels and novel structures/materials that may be used in these devices. Commercial semiconductor lasers are nearly ideal in terms of their physical properties. Their intensity noise spectra and short-term frequency stability are governed almost exclusively by quantum mechanical effects, and these, in turn, determine system performance levels
  • Keywords
    electron device noise; laser frequency stability; semiconductor junction lasers; device physics; field fluctuations; frequency noise; intensity noise; intensity noise spectra; operation; quantum mechanical effects; semiconductor lasers; short-term frequency stability; Fluctuations; Frequency; Laser noise; Laser theory; Noise level; Optical materials; Physics; Semiconductor device noise; Semiconductor lasers; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control, 1991., Proceedings of the 45th Annual Symposium on
  • Conference_Location
    Los Angeles, CA
  • Print_ISBN
    0-87942-658-6
  • Type

    conf

  • DOI
    10.1109/FREQ.1991.145947
  • Filename
    145947