Mobility in Back-Gate/Double-Gate Undoped Thin Silicon Channel Transistors

Author

Kumar, Ajit ; Mohta, Setu ; Avci, Uygar E. ; Kumar, Ajit ; Tiwari, Sunita

Author_Institution

School of Electrical and Computer Engineering, Cornell University. Ithaca, NY. Email: ak226@cornell.edu

fYear

2006

fDate

26-28 June 2006

Firstpage

Lastpage

Keywords

Bonding; Capacitance; Capacitance-voltage characteristics; Charge carrier processes; Clouds; Doping; Electrons; Geometry; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

DOI

10.1109/DRC.2006.305107

Filename

4097524

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