DocumentCode
3452924
Title
Mechanical properties of pure and doped indium phosphide single crystals
Author
Boyarskaya, Yu.S. ; Grabko, D.Z. ; Medinskaya, M.I. ; Palistrant, N.A. ; Zhitaru, R.P.
Author_Institution
Inst. of Appl. Phys., Kishinev, Moldova
fYear
1995
fDate
11-14 Oct 1995
Firstpage
387
Lastpage
390
Abstract
The mechanical properties have been studied for the (001) and {111} planes of pure and doped InP single crystals. As was shown the anisotropy of these properties can be successfully investigated by using the sclerometer technique (scratch method) and acoustic emisson method. The influence of doping on microhardness has been revealed to be more pronounced at T~600 K than at room temperature
Keywords
III-V semiconductors; indium compounds; microhardness; semiconductor doping; InP; acoustic emisson; anisotropy; doping; indium phosphide single crystals; mechanical properties; microhardness; sclerometer; scratch method; Acoustic measurements; Anisotropic magnetoresistance; Crystals; Doping; Etching; Indium phosphide; Mechanical factors; Physics; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495042
Filename
495042
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