DocumentCode

3453090

Title

Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

Author

Ong, Pang-Leen ; Samantaray, Chandan ; Chen, Zhi

Author_Institution

Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506

fYear

2006

fDate

26-28 June 2006

Firstpage

79

Lastpage

80

Keywords

Annealing; Deuterium; Dielectric measurements; Hafnium oxide; Leakage current; MOS capacitors; Semiconductor films; Silicon; Thickness measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305127

Filename

4097544