DocumentCode
3453208
Title
Low work-function TaN-metal gate with Gadolinium oxide buffer layer on Hf-based dielectrics
Author
Thareja, Gaurav ; Rhee, Se Jong ; Wen, Huang-Chun ; Harris, Rusty ; Majhi, Prashant ; Lee, Byoung Hun ; Lee, Jack C.
Author_Institution
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758
fYear
2006
fDate
26-28 June 2006
Firstpage
93
Lastpage
94
Abstract
Reduction in effective work function (EWF) of mid gap-TaN metal gate electrode with Gadolinium (Gd2O3) buffer layer in Hafnium based high-K gate stack has been demonstrated. EWF of 4.2eV was achieved for TaN with a bi-layer arrangement of Gd2O3/HfSiOx dielectric. By using Gd-Si co-sputtered layer on HfO2, a reduction in EWF to NMOS compatible EWF of 4.05eV was obtained. NMOSFETs with improved output current, transconductance, and channel electron mobility highlight the approach of using Gadolinium in the gate stack.
Keywords
Buffer layers; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Personal digital assistants; Silicon; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305134
Filename
4097551
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