Picosecond optical pulses in mid-infrared intersubband semiconductor optical amplifiers

Author

Tang, J.M. ; Spencer, P.S. ; Rees, P. ; Pierce, I. ; Shore, K.A.

Author_Institution

Sch. of Informatics, Univ. of Wales, Bangor, UK

fYear

2001

fDate

11-11 May 2001

Firstpage

443

Lastpage

444

Abstract

Summary form only given. A comprehensive theoretical model has been developed to describe amplification of picosecond optical pulses in mid IR SOAs. The investigations show that gain dispersion, short carrier relaxation time, and ultrafast nonlinear refraction have significant impact on the amplified pulse characteristics in the time and frequency domains. Calculations also indicate that gain dispersion can be enhanced by fast carrier relaxations, short pulse widths, and high pulse energies.

Keywords

carrier relaxation time; high-speed optical techniques; infrared sources; laser theory; light refraction; nonlinear optics; optical dispersion; semiconductor device models; semiconductor optical amplifiers; amplified pulse characteristics; comprehensive theoretical model; fast carrier relaxations; frequency domains; gain dispersion; high pulse energies; mid IR SOAs; mid-infrared intersubband semiconductor optical amplifiers; picosecond optical pulses; short carrier relaxation time; short pulse widths; time domains; ultrafast nonlinear refraction; Nonlinear optics; Optical modulation; Optical pulse shaping; Optical pulses; Optical refraction; Pulse amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Space vector pulse width modulation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.948021

Filename

948021