On line monitoring of RF power amplifiers with embedded temperature sensors

Author

Altet, Josep ; Mateo, Diego ; Gómez, Didac

Author_Institution

Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain

fYear

2012

fDate

27-29 June 2012

Firstpage

109

Lastpage

113

Abstract

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2 GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; differential amplifiers; intelligent sensors; monitoring; temperature measurement; temperature sensors; CMOS IC; DC temperature measurement; PA output power tracking; RF power amplifiers; Si; embedded differential temperature sensor; frequency 2 GHz; high frequency online monitoring status; linear class A Power Amplifier; size 65 nm; Monitoring; Power amplifiers; Radio frequency; Temperature measurement; Temperature sensors; RF test; analog test; on line temperature monitoring; power amplifiers test; temperature sensors; thermal test;

fLanguage

English

Publisher

ieee

Conference_Titel

On-Line Testing Symposium (IOLTS), 2012 IEEE 18th International

Conference_Location

Sitges

Print_ISBN

978-1-4673-2082-5

Type

conf

DOI

10.1109/IOLTS.2012.6313850

Filename

6313850