Effects of facet head-on light ion-irradiation in InGaP/GaAs/InGaAs quantum well lasers

Author

Pataro, L.L. ; Nascimento, G.C. ; Danilov, I. ; Frateschi, Newton C.

Author_Institution

Instituto de Fisica, Univ. Estadual de Campinas, Brazil

fYear

2001

fDate

11-11 May 2001

Firstpage

481

Lastpage

482

Abstract

Summary form only given. We present results on the reduction in free-carrier absorption for n-InGaP material with He/sup +/ ion irradiation. Threshold doses for isolation above 1/spl times/10/sup 13/ cm/sup -2/ at 100 keV are obtained. Transparency through 1 /spl mu/m of n-InGaP material is examined by photoluminescence. We find a twofold increase in quantum well emission photoluminescence intensity after irradiation. Also, damage to the quantum well is investigated as a function of irradiation energy and quantum well depth. Finally, we investigate irradiation effects on the field intensity and temperature distribution at the facets. Evidence of enhancement in cladding layer transparency to the laser emission is observed on the irradiated facet. Therefore, less facet heating and degradation is expected with the head-on irradiation treatment.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion beam effects; photoluminescence; quantum well lasers; semiconductor quantum wells; temperature distribution; 100 keV; He/sup +/ ion irradiation; InGaP-GaAs-InGaAs; InGaP/GaAs/InGaAs quantum well lasers; cladding layer transparency; facet head-on light ion irradiation effects; facet temperature distribution; field intensity; free-carrier absorption; irradiation energy; n-InGaP; photoluminescence; quantum well damage; quantum well depth; quantum well emission photoluminescence intensity; ridge waveguide lasers; threshold isolation doses; transparency; Absorption; Gallium arsenide; Indium gallium arsenide; Laser modes; Mirrors; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.948070

Filename

948070