GaAs HBTs: an analog circuit design perspective

Author

Corcoran, John ; Poulton, Ken ; Knudsen, Knud

Author_Institution

Hewlett-Packard, Palo Alto, CA, USA

fYear

1991

fDate

9-10 Sep 1991

Firstpage

245

Lastpage

252

Abstract

The basic characteristics of GaAs heterojunction bipolar transistors (HBTs) are described, and SPICE parameters of HBT devices are compared to those of a silicon process with breakdown voltage adequate for analog applications. Simulated amplifier bandwidth in the GaAs process is seen to be about twice that of the silicon process at high currents, but the margin decreases at lower currents. Thermal management of HBT IC designs is shown to be important. Simulation tools to control peak junction temperatures and to model thermally induced transients are described

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; semiconductor device models; thermal analysis; GaAs; HBT IC designs; SPICE parameters; analog circuit design; breakdown voltage; heterojunction bipolar transistors; model; peak junction temperatures; simulation tools; thermal management; thermally induced transients; Analog circuits; Bandwidth; Circuit simulation; Doping; Gallium arsenide; Heterojunction bipolar transistors; Microwave circuits; SPICE; Silicon devices; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.160996

Filename

160996