DocumentCode
3455961
Title
Dopant Activation In Poly-SI/sub1-x/Ge/subx/ At Low Temperature
Author
Zhonghe Jin ; Zhiguo Meng ; Gururaj, B.A. ; Yeung, M. ; Hoi Sing Kwok ; Man Wong
fYear
1997
fDate
13-14 Feb. 1997
Firstpage
65
Lastpage
68
Keywords
Boron; Conductivity; Crystallization; Electric variables measurement; Furnaces; Germanium silicon alloys; Hall effect; Rapid thermal annealing; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Display, 1997., Proceedings of the Fourth Asian Symposium on
Conference_Location
Hong Kong, China
Print_ISBN
962-8273-01-9
Type
conf
DOI
10.1109/ASID.1997.631400
Filename
631400
Link To Document