Fabrication and characterization of a silicon nanofin non-volatile memory

Author

Bowoon Soon ; Singh, Navab ; Tsai, Julius Minglin ; Chengkuo Lee

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2013

fDate

16-20 June 2013

Firstpage

892

Lastpage

895

Abstract

This paper reports the fabrication and characterization of a bi-stable non-volatile device based on nanoelectromechanical system. The device consists of a silicon nanofin (SiNF) of 2, 8, 12 μm length by 90 nm thick which can be switched bi-directionally and achieve two stable geometrical position. After switching, the hysteresis behavior is realized through the nature van der Waals force that holds the SiNF to the surface of the contact terminal. Measurement results show bi-stable hysteresis behavior with pull-in voltage, V_PI at 10V and reset voltage, V_RESET at -12V. The measured voltage drift of this device is 24mV/°C from 50°C to 150°C.

Keywords

nanoelectromechanical devices; random-access storage; van der Waals forces; bistable nonvolatile device; fabrication; geometrical position; nanoelectromechanical system; silicon nanofin nonvolatile memory; van der Waals force; Electrodes; Force; Logic gates; Nonvolatile memory; Silicon; Switches; Voltage measurement; NEMS; Nanoelectromechanical system; non-volatile memory; relay; switch; van der Waals;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6626911

Filename

6626911