Basic characters of double-sided silicon strip detectors with double-layer aluminum electrodes

The authors have fabricated double-sided silicon strip detectors which employ double-layer aluminum electrodes in order to read out strips to the desired directions. Several kinds of insulators were utilized to keep the upper electrode and the lower electrode isolated. Noise levels and cross talk are studied using newly fabricated samples with the double-layer electrodes. The observed cross talk level is estimated to be several percent, assuming that all of that is due to the double-layer structure. An increase of the noise caused by an increase of the capacitance associated with the double-layer structure was observed, but the degradation is considered to be tolerable. The increase will become negligible using read-out chips with higher transconductance.<>