Scaling down of tunnel oxynitride in NAND flash memory: oxynitride selection and reliabilities

Author

Kim, Jonghan ; Choi, Jung Dal ; Shin, Wang Chul ; Kim, Dong Jun ; Kim, Hong Soo ; Mang, Kyong Moo ; Ahn, Sung Tae ; Kwon, Oh Hyun

Author_Institution

Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

1997

fDate

8-10 Apr 1997

Firstpage

12

Lastpage

16

Abstract

The selection of a manufacturable furnace-grown oxynitride process and reliability issues of the scaled tunnel oxide are examined. As the oxide thickness is scaled down, the cycling endurance, read life time and program disturb characteristics in a NAND flash memory with the tunnel oxynitride are improved compared to the conventional dry oxide

Keywords

CMOS memory circuits; EPROM; NAND circuits; integrated circuit reliability; nitridation; oxidation; tunnelling; 5 to 9 nm; 850 C; N₂O; N₂O nitridation; NAND flash memory; Si-SiON; cycling endurance; double level polysilicon CMOS process; flash EEPROM; manufacturable furnace-grown oxynitride process; oxynitride selection; program disturb characteristics; read life time; reliability issues; tunnel oxynitride scaling down; Degradation; Dielectrics; EPROM; Fabrication; Manufacturing processes; Nitrogen; Nonvolatile memory; Oxidation; Semiconductor device manufacture; Semiconductor device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584220

Filename

584220