Effects of focused ion beam irradiation on MOS transistors

Author

Campbell, Ann N. ; Peterson, Kenneth A. ; Fleetwood, Daniel M. ; Soden, Jerry M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1997

fDate

8-10 Apr 1997

Firstpage

72

Lastpage

81

Abstract

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga⁺ focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

Keywords

MOSFET; focused ion beam technology; ion beam effects; 30 keV; Ga; MOS transistor; damage; focused ion beam irradiation; interface traps; mobility; oxide trapped charge; threshold voltage; transconductance; Circuits; Electrons; Electrostatic discharge; Focusing; Ion beams; Laboratories; MOSFETs; Navigation; Optical imaging; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584241

Filename

584241