New discrete IGBT development for consumer use - application-specific advanced discrete IGBTs with optimized chip design

Author

Umekawa, Shinichi ; Yamaguchi, Masakazu ; Ninomiya, Hideaki ; Wakiyama, Seiichiro

Author_Institution

Semicond. Co., Toshiba Corp., Hyougo, Japan

fYear

2010

fDate

21-24 June 2010

Firstpage

790

Lastpage

795

Abstract

Insulated Gate Bipolar Transistor (IGBTs) are widely used in both commercial and industrial appliances, and the applications for commercial appliances such as strobe flash, plasma display panel (PDP) TV and induction heating (IH) cooker, in particular, is diverse. We have developed advanced, application-specific IGBTs with high current density for strobe flash, fast turn-on characteristics for PDP and low on-state voltage characteristics for IH cooker. This paper describes the performance requirement and technical development of the latest Discrete IGBTs.

Keywords

induction heating; insulated gate bipolar transistors; plasma displays; television displays; consumer use; discrete insulated gate bipolar transistor; fast turn-on characteristics; induction heating cooker; low on-state voltage characteristics; optimized chip design; plasma display panel TV; strobe flash; Bipolar transistors; Chip scale packaging; Consumer products; Current density; Design optimization; Electrical equipment industry; Home appliances; Insulated gate bipolar transistors; Low voltage; TV; Discrete IGBT; IH cooker; PDP; Strobe Flash;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Conference (IPEC), 2010 International

Conference_Location

Sapporo

Print_ISBN

978-1-4244-5394-8

Type

conf

DOI

10.1109/IPEC.2010.5543299

Filename

5543299