Experiment and Theory for the Thickness Effect of Nano Metal Oxide Gas Sensing Thin Film The Thickness Effect and Mesoscopic Theory of Conductance Activity Energy

Author

Jianping, Xing ; Qinghua, Yuan ; Donghua, Li ; Honglang, Lu ; Nanwan, Qiu

Author_Institution

Sch. of Inf. Sci. & Eng., Shandong Univ., Ji´´nan

fYear

2006

fDate

20-23 Aug. 2006

Firstpage

1460

Lastpage

1464

Abstract

The characteristics of conductance activity energy of SnO₂ thin film varies with film thickness l and grain size r₀ are given by experiment results. The cross-section current formula of porous materials and the conductance formula of gas sensing thin film with adsorbed oxygen negative ion are given. The mesoscopic theory of nano-thin film conductance activity energy was proposed, and using the corrected Fermi statistic formula for the concentration of adsorbed negative ion, the theoretical curve of Eact varies with grain size r₀ yield; from which, the related problems are discussed.

Keywords

Fermi level; electrical conductivity; gas sensors; grain size; mesoscopic systems; nanostructured materials; porous semiconductors; semiconductor thin films; statistical analysis; thin film sensors; tin compounds; Fermi statistic formula; SnO₂; adsorbed oxygen negative ion concentration; grain size; mesoscopic theory; nano metal oxide gas sensing thin film; nanothin film conductance activity energy characteristics; porous materials; thickness effect; Annealing; Conducting materials; Conductive films; Grain size; Information science; Physics; Power engineering and energy; Statistics; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Acquisition, 2006 IEEE International Conference on

Conference_Location

Shandong

Print_ISBN

1-4244-0528-9

Electronic_ISBN

1-4244-0529-7

Type

conf

DOI

10.1109/ICIA.2006.305972

Filename

4097905