Current gain long-term instability of AlGaAs/GaAs HBT: physical mechanism and SPICE simulation

Author

Sheu, S. ; Lieu, J.J. ; Huang, C.I.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1997

fDate

8-10 Apr 1997

Firstpage

248

Lastpage

252

Abstract

The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e. burn-in test)

Keywords

III-V semiconductors; SPICE; aluminium compounds; circuit analysis computing; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; leakage currents; semiconductor device models; semiconductor device reliability; stability; AlGaAs-GaAs; AlGaAs/GaAs HBT; HBT circuit simulation; HBT model; SPICE simulation; base leakage currents; burn-in test; collector leakage currents; current gain long-term instability; electrical stress test; heterojunction bipolar transistor; physical mechanism; stress-induced abnormal base current; thermal stress test; Circuit simulation; Circuit testing; Computational modeling; Current measurement; Dielectric substrates; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Leakage current; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584268

Filename

584268