Development of a 64×64-pixel ion camera chip for ionic imaging using an unmodified 0.35 μm CMOS technology

Author

Nemeth, Balazs ; Streklas, A. ; Boulay, A.G. ; Symes, M. ; Busche, Christoph ; Cronin, Leroy ; Cumming, David R. S.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

16-20 June 2013

Firstpage

1743

Lastpage

1746

Abstract

An Ion Sensitive Field Effect Transistor (ISFET) array was designed for detecting non-equilibrium ion-flux activity and pH alterations on a 1mm² sensing area. The ion sensitive array consists of a 64 × 64 pixel system, each one of them sized 10.2 μm × 10.2 μm using a standard CMOS 0.35 μm four metal layer technology. Appropriate digital logic was embedded in circuitry to ensure a fast and efficient readout. The ISFET Array has successfully monitored pH oscillations in slime mould, the Belousov-Zhabotinsky reaction and the growth of polyoxometalate membranes.

Keywords

CMOS image sensors; CMOS logic circuits; chemical sensors; computerised monitoring; ion sensitive field effect transistors; moulding; sensor arrays; Belousov-Zhabotinsky reaction; ISFET array; digital logic; ion camera chip development; ion sensitive array; ion sensitive field effect transistor; ionic imaging; metal layer technology; nonequilibrium ion flux activity detection; pH oscillation monitoring; pixel system; polyoxometalate membrane growth; size 0.35 mum; size 10.2 mum; slime mould; unmodified CMOS technology; CMOS integrated circuits; Monitoring; Oscillators; Sensor arrays; Transistors; CMOS; ISFET; ion camera; ion-sensitive; non-equilibrium monitoring; pH detection; real time imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on

Conference_Location

Barcelona

Type

conf

DOI

10.1109/Transducers.2013.6627124

Filename

6627124