• DocumentCode
    3460732
  • Title

    Key hot-carrier degradation model calibration and verification issues for accurate AC circuit-level reliability simulation

  • Author

    Jiang, Wenjie ; Le, Huy ; Dao, Steve ; Kim, Seokwon A. ; Stine, Brian ; Chung, James E. ; Wu, Yu-Jen ; Bendix, Peter ; Prasad, Sharad ; Kapoor, Ashok ; Kopley, Thomas E. ; Dungan, Tom ; Manna, Indrajit ; Marcoux, Paul ; Wu, Lifeng ; Chen, Alvin ; Liu, Zhi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • fYear
    1997
  • fDate
    8-10 Apr 1997
  • Firstpage
    300
  • Lastpage
    306
  • Abstract
    This study provides necessary degradation model calibration and evaluation guidelines required to enable more consistent and effective use of hot-carrier reliability simulation tools. Benchmark results provide strong verification that the AC degradation models are generally accurate if properly calibrated; however, SPICE modeling errors, secondary physical mechanisms and statistical parameter variation are found to impact the simulated results as much as differences in the circuit design itself
  • Keywords
    SPICE; calibration; circuit analysis computing; hot carriers; reliability theory; semiconductor device models; semiconductor device reliability; AC circuit-level reliability simulation; SPICE; hot-carrier degradation model calibration; statistical parameters; verification; Acceleration; CMOS technology; Calibration; Circuit simulation; Degradation; Hot carriers; MOS devices; SPICE; Semiconductor device modeling; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    0-7803-3575-9
  • Type

    conf

  • DOI
    10.1109/RELPHY.1997.584278
  • Filename
    584278