DocumentCode
3460813
Title
A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity
Author
Han, Qing ; Shimura, Atsushi ; Inagaki, Keizo ; Ohira, Takashi ; Akaike, Masami
Author_Institution
ATR Wave Eng. Lab, Kyoto, Japan
Volume
3
fYear
2005
fDate
4-6 Oct. 2005
Abstract
This paper presents a trial fabricated GaAs monolithic anti-series varactor pair. Its second-order and third-order harmonic distortions, which are generated from the nonlinearity of capacitance-voltage characteristics, are investigated experimentally and numerically. Compared to the case of a single varactor, the distortions of measurement and simulation are suppressed by about 25 dB and 45 dB for the second-order harmonic, and 3 dB and 10 dB for the third-order harmonic, respectively.
Keywords
III-V semiconductors; gallium arsenide; harmonic distortion; monolithic integrated circuits; varactors; GaAs; RF nonlinearity; capacitance-voltage characteristics; harmonic distortions; monolithic anti-series varactor pair; voltage-controlled capacitance; Capacitance; Capacitance-voltage characteristics; Distortion measurement; Gallium arsenide; Harmonic distortion; P-n junctions; Radio frequency; Semiconductor device measurement; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1610249
Filename
1610249
Link To Document