Effect of stresses on electromigration

Author

Rosenmayer, C.T. ; Brotzen, F.R. ; McPherson, J.W. ; Dunn, C.F.

Author_Institution

Rice Univ., Houston, TX, USA

fYear

1991

fDate

9-11 April 1991

Firstpage

52

Lastpage

56

Abstract

The influence of mechanical stress on electromigrational damage was determined by direct observation of void formation in 1- mu m-thick Al-Si(1%) metallizations deposited on Si/SiO/sub 2/ substrates after the metallizations had been subjected simultaneously to high current densities and controlled tensile stresses. The results were interpreted by considering vacancy diffusion as well as nucleation and growth of voids. The analysis points to a strong effect of stress on the nucleation of voids, with only minor effects on the electromigrational diffusion of vacancies.<>

Keywords

aluminium alloys; electromigration; metallisation; nucleation; silicon alloys; 1 micron; AlSi-Si-SiO/sub 2/; current densities; electromigration; electromigrational diffusion; mechanical stress; nucleation; tensile stresses; vacancy diffusion; void formation; voids; Current density; Electromigration; Instruments; Metallization; Plastics; Silicon; Stress control; Telephony; Temperature; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1991, 29th Annual Proceedings., International

Conference_Location

Las Vegas, NV, USA

Print_ISBN

0-87942-680-2

Type

conf

DOI

10.1109/RELPHY.1991.145986

Filename

145986