• DocumentCode
    3462569
  • Title

    Characteristics of MBCFET (Multi-Bridge-Channel MOSFET) with Tall-Embedded-Gate (TEG)

  • Author

    Yun, Eun Jung ; Kim, Min Sang ; Kim, Sung Min ; Lee, Sung-Young ; Kim, Dong-Won ; Park, Donggun

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Yongin
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    81
  • Lastpage
    83
  • Abstract
    We demonstrate multi-bridge-channel MOSFET (MBCFET) with new gate structure on bulk Si wafer. Sub 25nm MBCFET shows excellent transistor characteristics, such as 750,000 times on/off current ratio and 3.61mA/mum drive current at 4.8nA/mum of off-state current by using tall-embedded-gate (TEG) structure. And thanks to suitable threshold voltage for n,pMBCFET and high current drivability, we successfully achieved high static noise margin (SNM) of 386mA at Vcccc = 1V
  • Keywords
    CMOS integrated circuits; MOSFET; noise; silicon; 1 V; 25 nm; 386 mA; MBCFET; Si; multi-bridge-channel MOSFET; static noise margin; tall-embedded-gate; threshold voltage; transistor characteristics; CMOS process; Etching; Fabrication; Germanium silicon alloys; Ion implantation; MOSFET circuits; Parasitic capacitance; Research and development; Silicon germanium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306083
  • Filename
    4098027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3462569