An assessment of the performance for double gate Schottky barrier MOSFETs with modulated back gate

Author

Zhai, Yu-Jia ; Kang, Jin-Feng ; Du, Gang ; Han, Ru-qi ; Liu, Xiao-Yan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

87

Lastpage

89

Abstract

A new structure of double gate SB MOSFET in which one of the gates is used to modulate the electric potential distribution (back gate modulated SB MOSFET) is proposed and compared with conventional double gate SB MOSFET and UTB SB MOSFET in terms of off state leakage current, on state current and minimum current, as well as sub-threshold slope(S). The mechanism of SB MOSFET leakage current in off state is analyzed. The influence of back gate voltage on the performance of the SB MOSFETs with various parameters of channel doping, Schottky barrier height and the scalability is investigated. The results can provide a design guideline for further devices optimization

Keywords

MOSFET; Schottky barriers; leakage currents; optimisation; Schottky barrier height; back gate voltage; channel doping; devices optimization; double gate Schottky barrier MOSFET; electric potential distribution modulation; modulated back gate; state leakage current; CMOS technology; Charge carrier processes; Leakage current; MOSFETs; Microelectronics; Schottky barriers; Silicides; Silicon; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306085

Filename

4098029