Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

Author

Xia, Zhiliang ; Du, Gang ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2006

fDate

Oct. 2006

Firstpage

152

Lastpage

154

Abstract

Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate (DG) MOSFETs are investigated using 2D full-band self-consistent ensemble Monte Carlo (MC) method based on solving quantum Boltzmann equation (QBE). Results show that the effect of the surface roughness on carrier quasi-ballistic transport in DG nMOSFETs is still significant even when the gate length scales down to 10 nm. Moreover, the influence of surface roughness can be suppressed by the non-local transport since the on-current of the Ge DG nMOSFETs decreasing less than that of Si DG nMOSFETs with increasing of surface roughness

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; ballistic transport; elemental semiconductors; germanium; silicon; surface roughness; 2D full-band Monte Carlo method; Ge; Si; nanoscale double-gate MOSFETs; quantum Boltzmann equation; quasi-ballistic transport; surface roughness; Acoustic scattering; Doping; Electron mobility; MOSFETs; Microelectronics; Optical scattering; Particle scattering; Phonons; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306124

Filename

4098046