Electrical properties and carrier transport mechanisms of nanometer-scale ultra-thin channel poly-Si transistors

Author

Guo, Xiaojun ; Ishii, Tomoyuki ; Silva, S.R.P.

Author_Institution

Adv. Technol. Inst., Surrey Univ., Guildford

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

194

Lastpage

196

Abstract

This paper investigates the electrical properties and the carrier transport mechanisms of nanometer-scale ultra-thin channel (< 3.0nm) poly-Si transistors to be guidelines for future process on device optimization and modeling. Devices used for the study are fabricated with a precise control over the film thickness down to sub-nanometer scale

Keywords

electric properties; nanotechnology; optimisation; thin film transistors; carrier transport mechanisms; device optimization; electrical properties; nanometer-scale poly-Si transistors; nanometer-scale ultra-thin channel; ultra-thin channel poly-Si transistors; Electrodes; Fabrication; Intrusion detection; Leakage current; Lithography; Mechanical factors; Resists; Silicon compounds; Thickness control; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306136

Filename

4098058

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3463107